MRAM based FPGA
1. Thermally assisted switching (TAS) MRAM :
- small current to heat MTJ -> higher sensitivity to magnetic field induced by above or below the MTJ
- TAS reduce current to induce magnetic field cur by half (5~10mA) than field induced magnetization switching (FIMS)
- STT is the best option for power consumption, though.
2. Most FPGA has SRAM for configuration memory
- For read operation, each memory point should be readable independently -> each point to drive transistor gate or lookup table input
- For writing operation, those memory operates in classic memory array -> speed limitation is the size of memory array.
- Increasing number of array improve speed and allows parallel loading
3. MRAM stack over CMOS logic in single chip
- Store information permanently (NVM-FPGA) -> simplify system level design
- Power saving advantage during standby mode
- Speed improvement as no need to load configuration data from external NVM. (which is the case for SRAM FPGA)
4. NVM register for MCU application
- Improve speed to reduce context of application
- Better soft error.