6_J.W. Lee_Samsung.pdf (application/pdf 객체)

6_J.W. Lee_Samsung.pdf (application/pdf 객체).

  • LEG technology easily able to obtain single c-Si layer
    over oxide and successfully implemented to 3-D
    stacking structure
  • Tr. characteristics on LEG Si film show the excellent
    performance and distribution
  • LEG SRAM with 3-level cell stacking has the extremely
    low Stand-by leakage current (0.3uA / Mb)
  • => LEG Process is one of highly promising technologies
    for stacked memory devices with manufacturability
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