Archive for the ‘ E beam ’ Category

EETimes.com – SPIE: TSMC jumps on EUV bandwagon

EETimes.com – SPIE: TSMC jumps on EUV bandwagon.

SAN JOSE, Calif. — In a major development, ASML Holding NV said that Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) will take delivery of ASML’s extreme ultraviolet (EUV) lithography system.At some point, possibly next year or sooner, TSMC will take delivery of a TwinScan NXE:3100 tool from ASML. The NXE:3100 is a ”pre-production” EUV tool, said to have an NA of 0.25.

This represents a change in direction for silicon foundry giant TSMC. TSMC has dismissed EUV–at least in the past. For next-generation lithography, the company has been backing maskless lithography. It will continue to do so.

After months of collaboration, foundry chip supplier TSMC and Mapper Lithography BV recently claimed that Mapper’s tool located on TSMC’s Fab 12 GigaFab is printing features so far unachievable with current immersion lithography technology. In 2008, TSMC and Mapper concluded an agreement according to which Mapper would ship its first 300 mm multiple-electron-beam maskless lithography platform for process development and device prototyping to TSMC.

TSMC is also expected to be one the first dedicated foundries conducting on-site EUV development. It will install the new system on its Fab 12 GigaFab for development of future technology nodes.

TSMC is evaluating EUV and other lithography technologies for their potential to optimize cost-effective manufacturing at future technology nodes. EUV technology employs a much shorter wavelength and has the potential to reduce costs associated with current techniques used to stretch 193-nm immersion lithography, making it a promising lithography technology for manufacturing IC’s for future advanced technology nodes.

“TSMC will use a TwinScan NXE:3100 for research and development of future advanced technology nodes,” said Shang-yi Chiang, TSMC’s senior vice president of research and development, in a statement. “EUV is one of next-generation lithography technologies we are investigating.”

Others have also jumped on the EUV bandwagon, including Hynix, Intel, Samsung, Toshiba, among others.

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Nano-injection; NGL to make 0.039um2 bitcell for 16nm

  • 나노 인젝션(NanoInjection)이라는 새로운 리소그래피 기술을 이용한다. 이는 가스를 불어 넣는 지점에 전자 빔을 대서 패턴을 그리는방법이다(그림6(b)).
  • 나노 인젝션의 이점은 기존의 전자 빔 리소그래피 기술과는 달리 포토 레지스트가 필요 없다는 점이다. 포토 레지스트를 쓰지 않아도 되기 때문에 리소그래피의 해상도를 높이기 쉽고, 결과적으로 미세한 패턴을 형성할 수 있게 되는 것이다.
  • 하지만 단점도 있다. 기존의 전자 빔 기술 등과 마찬가지로 생산성이 낮다는 것이다. 앞으로 생산성 향상을 위한 연구개발이 진행될 것으로 보인다.
  • Nano injection lithography eliminates the masks of other lithography techniques. Eliminating the masks and the photoresist cuts the patterning process from five steps to one, greatly simplifying production.
  • A new type of lithography, which uses an electron beam to spark a chemical reaction, could provide a cheaper way to build the incredibly tiny transistors that the chipmaking industry will require in a few years.
  • Researchers from Taiwan and the University of California, Berkeley, say they’ve made static random access memory (SRAM) that anticipates 16-nanometer chip features with a new process called nano injection lithography.
  • They say their technique may provide an alternative to lithography that relies on extreme ultraviolet light (EUV), which still is beset by problems and could be extremely expensive.
  • a metallorganic gas, an organic molecule studded with atoms of platinum.
  • An electron beam with a diameter of 4.6 nm is fired at the gas, causing a chemical reaction that deposits the platinum on the silicon chip in the desired pattern, while the rest of the gas flows away.
  • With this hard mask deposited on the silicon, the researchers then use chemicals to etch away exposed silicon and thereby create the desired circuits. The platinum mask is then chemically removed.