Posts Tagged ‘ 450mm ’

TSMC to make FinFETs in 450-mm fab

TSMC to make FinFETs in 450-mm fab.

At the SPIE Advanced Lithography conference here, Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) outlined more details about its 450-mm fab plans. SAN JOSE, Calif. – At the SPIE Advanced Lithography conference here, Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) outlined more details about its 450-mm fab plans.

The silicon foundry giant hopes to process 14-nm FinFET devices in full production on 450-mm wafers by 2015 or 2016, said Shang-Yi Chiang, senior vice president of R&D at TSMC.

As reported, Intel, Samsung and TSMC are pushing hard for 450-mm fabs. Intel has already announced two ”450-mm ready’’ fabs. The fab tool vendors are warming up to 450-mm development, but most are still behind schedule with the technology. Some believe that 450-mm will cause confusion in the supply chain.

Recently, TSMC said it plans to install its first 450-mm line in Taiwan by 2013 to 2014.  It will process wafers at the 20-nm node on 450-mm substrates. Many of the details were not disclosed when TSMC made that initial announcement.

In an interview at SPIE after his keynote, Chiang elaborated on those plans. Initially, TSMC hopes to install a 450-mm pilot line in Fab 12 in Hsinchu, Taiwan. The line will process wafers at the 20-nm node. It hopes to get the pilot line up and running by 2013 to 2014.

Then, TSMC plans to bring up its first 450-mm production fab in Taichung, Taiwan, which will process devices at the 14-nm node. The Taichung plant is called Fab 15.

At 14-nm, TSMC plans to make a switch in transistor structures. At the 20-nm node and above, TSMC will continue to use traditional planar transistors based on bulk CMOS. At 14-nm, the company plans to make the switch from bulk CMOS to FinFET structures, he said.

So, the company will produce 14-nm FinFETs in production in Fab 15. Production is slated for 2015 to 2016.

The TSMC technologist said 450-mm wafers enable a 2.25- to 2.40-fold productivity gain over 300-mm wafers. But he acknowledged there are several challenges with 450-mm, namely to get the equipment vendors on board.

At one time, most fab tool vendors were reluctant to invest in 450-mm. Many believe it is too expensive and there is little or no return-on-investment.

Now, fab tool vendors are warming up to the idea for several reasons. First, Sematech, which is leading the charge in 450-mm, is providing some funding for fab tool vendors in 450-mm. Second, the world’s largest chip makers are pushing hard for 450-mm and fab tool vendors don’t want to lose out on some business.

Chiang in a question and answer session said that ”the government would pay for half of the cost’’ of 450-mm tool R&D, but he did not elaborate.

”We see a bit more willingness on the part of equipment makers’’ to embrace 450-mm, said C.J. Muse, an analyst with Barclays Capital, in a recent report. ”We then think by 2016-2018, we will see adoption of 450-mm.’’

Lam Research Corp. is reportedly beginning to invest in 450-mm. Other fab tool vendors are also quietly developing tools, but 450-mm won’t be cheap.

Drop in the (450-mm) bucket
It could cost about $12 billion in R&D investments for 450-mm, Muse said. ”The move to 300-mm was very much more expensive than the prior wafer transitions. While estimates from VLSI/Sematech suggest the 125-mm transition cost only ~$250-300 million and the 150-mm transition ~$700 million, the 300mm cost ~$12 billion,’’ he said.

”It is assumed that the 450-mm transition will not be cheap, and clearly equipment companies are reluctant to pay the full tab. We will likely see a chicken and egg game, but we do expect chipmakers to help support the tool development efforts with equipment companies, at the same time, sharing some of the higher dollars received in the current golden era of capital intensity,’’ he said. – What’s the impact of 450-mm and EUV delays? – What’s the impact of 450-mm and EUV delays?.

SAN JOSE, Calif. — Another analyst sees delays for 450-mm fabs and extreme ultraviolet (EUV) lithography–a possible sign that Moore’s Law is in danger of slowing down.

On Thursday (Jan. 21), IC Insights Inc. indicated that there could be delays for two chip-scaling enablers: 450-mm fabs and EUV. Another emerging chip-scaling technology, 3-D devices based on thru-silicon vias (TSVs), remains in the embryonic stages and is ”overhyped,” said Trevor Yancey, an analyst with IC Insights.

Gus Richard, an analyst with Piper Jaffray & Co., also sees delays for 450-mm fabs and EUV. ”We believe that the transition to EUV will (be) challenging at best, unaffordable at the worst and likely significantly delayed,” Richard said in a new report. ”The alternative cost reduction path is larger wafers (450-mm). However, equipment companies are unwilling to fund the R&D for 450-mm development.”

What does that all mean? Perhaps a slowdown in the two-year process technology cycle. ”The underlying economic engine of the semiconductor industry is Moore’s Law and the price elasticity it provides. If the cadence of Moore’s Law slows, we think the growth rate of the semiconductor industry would slow as well,” he warned.

The current recession has delayed the possible transition to the next-generation 450-mm wafer size. 450-mm fabs were supposed to happen in the 2012-to-2014 time frame.

There are some return-on-investment (ROI) issues for fab tool makers. Simply put, the fab tool customer base for 450-mm is too small. The R&D is too costly. ”We estimate that a 450-mm fab in 5-10 years will cost somewhere between $8 billion and $12 billion. In our view, only 2 to 5 companies that will be able to make the transition to a 450-mm due to the high cost,” Richard said.

EUV is also in trouble. On the lithography front, today’s immersion lithography technology is enabling devices down to the 3x-nm node, maybe even the 2x-nm node. Lithography is the crucial technology that drives scaling or Moore’s law, he said.

EUV is supposed to be inserted at the 16-nm logic node in 2013. IC Insights believes EUV will be delayed and may be inserted at the 13-nm node in 2015 or 2016.

”The transition to EUV lithography may take longer and cost more than is expected,” Richard warned. ”NAND and DRAM suppliers will need a production EUV tool by 2012 or 2013 and Intel would like to have EUV by 2014. We estimate that ASML will ship 4 or 5 beta tools in 2010, and it has indicated that these tools will be ready for production in 2012. However, based on our conversations with industry contacts, many believe that EUV will not be ready until 2014 or 2016.”

So what will the industry do instead? ”We believe that the current generation of immersion lithography tools will allow Intel to move to 16-nm and NAND flash suppliers to move to 22-nm, the foundries to move to 28-nm and DRAM manufacturers to move to the 2x-nm nodes,” he said.

”Based on our conversations with lithography experts, double or triple patterning in combination with computational lithography could extend immersion lithography to the 2x-nm node for most manufacturers,” he said. ”We believe that Intel will be able to push immersion lithography to 16nm. However, the extension of immersion to 22-nm and below is likely to add to the cost and complexity of the current immersion lithographic process, potentially making immersion at advanced nodes uneconomical.”

Not all agree, namely ASML Holding NV and Nikon Corp. Both are developing EUV tools.

”ASML is making the bet on EUV; we believe that it is a bold and high stakes bet. We believe that it is too early to predict EUV’s success or failure and more will be known as beta systems are installed in the second half of 2010,” Richard pointed out.