Archive for the ‘ Lithography ’ Category

LithoForum: EUV’s next steps

LithoForum: EUV’s next steps.

LithoForum: EUV’s next steps

Fabtech – http://www.fabtech.org

Obert Wood caption: Obert Wood, head of the EUV program at the Fishkill Alliance, said EUV throughput is a major concernASML is now engaged in “full integration” of the NXE: 3100 EUV scanner expected to begin shipping in the second half of this year, ASML product marketing director Rard de Leeuw said at the Sematech Litho Forum in New York City. Six of the EUV systems, capable of 60 wph throughputs, will be shipped in the second half of this year, kicking off process development activities in preparation for high-volume manufacturing. ASML’s roadmap calls for the high-volume NXT:3300B EUV scanner to begin shipping in the second quarter of 2012.

“The source is now at ASML and is under installation, and five sets of optics have been made by Zeiss with flare now down to 4%. It looks good,” de Leeuw said.
Device makers at the Sematech meeting said they expect to begin using EUV for critical layers in the 2015-2016 time frame.

Bryan Rice, lithography program manager at Sematech’s Albany, N.Y. center, said much of the industry’s anxiety about EUV now centers on its cost effectiveness. “It is difficult to do a cost comparison when the technology is not yet at the required level of maturity. When it is, EUV will be a cost winner,” said Rice, an Intel assignee to Sematech.

Rice cited the improvement in the ability to pump air out of the exposure chamber as one example of EUV’s progress. “Do you know how long it used to take to achieve vacuum? It took nearly a week. Now, ASML can do that in 40 minutes. To me, that rate of progress is very impressive.” De Leeuw said the NXE:3100 remains too large, measuring 10 m long and 3 m wide. “We need to act here, to reduce the footprint” when the high-volume 3300 series scanners begin shipping. “We expect a 40% reduction, to 50 square meters of footprint, with the subfab not larger than the tool.”

ASML is talking to customers now about the NXT:3300 and expects to take its first purchase orders in July. The NXT:3300 will have improved Zeiss optics with a 0.32 NA, and a throughput of 125 wph, largely due to a sharp increase in the source power to 250 W.

EUV can be extended by reducing the 13.4 nm wavelength to 6.8 nm, now an active area of research. “We are studying how to extend EUV, with high NA optics and by cutting the wavelength in half,” de Leeuw said.

Toshikazu Umatate, a vice president at Nikon Precision, said Nikon’s high-volume EUV scanner will be ready in 2014-2015. “We want to match the 16 nm node timing,” Umatate said, adding that Nikon is “coordinating investments with the infrastructure developers.”

Nikon is monitoring the consolidation in the industry, and its likely impact on scanner manufacturers. The five-largest chip companies now spend about 50% of the total industry’s capital investments. While lithography vendors sold roughly a thousand tools in 2000, a decade later the expectation is for shipments of only 200 leading-edge exposure tools in 2010. “It is a higher risk, all-or-nothing situation now,” he said.

De Leeuw also dwelled on ASML’s rising R&D expenditures, saying EUV has cost the Dutch companies $1.5B thus far, with Zeiss spending another $600M. “EUV is here to stay, for many, many years,” he said. However, ASML projects that the semiconductor industry will consume an estimated 167 EUV tools overall. To recoup its investments, the ASML manager said $10B in EUV revenues is needed.

Others also are worried how to recoup their costs. With the track added, an EUV cluster will exceed $100M, said Julie Planchet, a manager at Dow Chemical Co. That unpalatable price tag will require a “new business model” for infrastructure suppliers who will not be able to afford an EUV tool of their own for development purposes.

On the plus side, several speakers at the Litho Forum said the widespread proliferation of mobile and consumer electronics will push semiconductor revenues up, making EUV affordable. Garry Patton, vice president of IBM’s Semiconductor Research and Development Center in East Fishkill, N.Y., said semiconductor revenues were only $1B in 1962, and are now pushing $300B. In the last decade alone, ICs for consumer electronics systems have increased 10X in value. That growth has helped justify the sharp increase in R&D spending, which Patton said has increased 10X in the last decade.

“EUV is the next frontier. Double patterning is too expensive, and by 2015-2016, at the 11 nm node, we will certainly need EUV,” Patton said. Meanwhile, the industry will employ source-mask optimization (SMO) and double patterning, along with design restrictions to ensure litho-friendly patterns. With EUV, Patton said, we can relax some of the constraints on the mask and the light source and avoid the need for double patterning and design restrictions.

“EUV is so important, we need to move full speed ahead,” Patton said, adding that it will be “quite challenging to make it happen by 2015-2016.” Even though immersion lithography was a relatively straightforward addition of water, it took five years for the chip industry to go from the early concept stage to full production in 2008 with “wet” 193 nm scanners. With EUV, there are at least six major changes, including the use of reflective optics and the new wavelength. “There is no pellicle for the EUV masks, and the ability to inspect the mask is one of the key challenges. Getting the source to the right kind of level, and resists, are among the other main challenges,” Patton said.

Sematech CEO Dan Armbrust said rapid progress is needed to reduce the number of defects on the EUV mask blanks, an issue cited by the Litho Forum survey as one of the two key challenges facing EUV lithography (source power was given nearly equal weight in the survey). Sematech is asking the two EUV mask blank suppliers to achieve a 10X reduction in defects, starting with a 2X reduction by July and a further 5X reduction thereafter.

“Two more orders (of defect reduction) are necessary at the supplier locations. If the mask blank defect issue is not solved, all the rest of our efforts will be for naught,” Armbrust said.

Sematech has organized the EUV Mask Inspection (EMI) program for mask blank and patterned mask inspection tools, with seven founding partners committing to a total of $200-300M in funding for the three inspection tools required. Geert Vandenberghe, an IMEC program manager who was called upon to stand in at the Litho Forum for IMEC CEO Luc Van den hove when the volcanic ash forced cancellation of Van den hove’s flight from Belgium to New York, said IMEC has processed a cumulative total of 2,000 wafers on its EUV Advanced Development Tool (ADT) from ASML since June 2008.

“We are on a path toward use of EUV at the 16 nm node, but the No. 1 critical issue has been mask inspection,” Vandenberghe said. He detailed IMEC’s work on EUV resist development, noting that sulfur-containing outgassing remains a concern.
Several device makers took the stage at the Forum, saying they need EUV to relieve the cost pressures presented by double patterning. Jeong-Ho Yeo, a Samsung process development manager, said Samsung “needs to insert double patterning for the 40 nm half-pitch. We hope to go to EUV for 20 nm half-pitch. We want to reduce our costs in three ways: by design rule shrinks, increasing the wafer size, and increasing the throughput of the scanners.”

With double patterning estimated to be 2-3X more expensive than single patterning, Samsung seeks to “either reduce the cost of double patterning or shift to EUV. Low-cost double patterning and high-throughput EUV are crucial in order to stay on the memory roadmap,” Yeo said.

EUV has the potential to be less costly than double patterning. (Source: Samsung Electronics)

Obert Wood, a GlobalFoundries staff member who heads up the EUV development program at the Fishkill Alliance, said 193 nm immersion lithography begins to run out of steam at the 40 nm half pitch. Showing images of contact layers made with both EUV and immersion scanners, Wood said EUV “can resolve spaces of 20 nm between the contact holes with perfect alignment.”

However, Wood cautioned that with Nikon planning to introduce its 0.4 NA high-volume EUV scanner in 2014, “it is slightly alarming that there will be only one supplier for the next few years.” Also, Wood said “mask blank defects are an order of magnitude higher that what is needed for pilot production.”

Turning to the resist development challenge, Wood said line edge roughness (LER) is now 2.5 nm, while “the spec calls for 1.5 nm. We have one resist which currently works for sub-20 nm resolution, but the line width roughness (LWR) is still higher than it needs to be. Pattern collapse is an issue with these thin resists.”

Wood said the “early news is that the quality of the EUV optics from Zeiss is better than expected. Zeiss has done a lot of work on high-refectivity optics, and there is no fundamental reason why we cannot upgrade eventually to 0.7 NA.”

Wood, who played a key role in the early EUV development at Bell Labs in the 1970s and 80s, said device manufacturers are concerned about cost of ownership (CoO) issues. The source power must increase in order to hit the throughput targets outlined by ASML. “Throughput is so important. Unless throughput is more than 100 wph, EUV does not show much cost advantage. My guess is that the early beta tools will not meet the 60 wafers per hour target if the source power goals are not met. And the blank costs are very much an unknown.”

Noting that EUV is clearly too late for the 22 nm node, Wood added that for some chip manufacturers EUV may also miss the 15 nm node. “I think it would be unwise to depend on EUV for the 15 nm generation, though there is some chance the infrastructure will be sufficiently ready in 2013 for early work at that node.”

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The Impact of Lithography Challenges

http://www.edn.com/professormemory/blog/1640000764/post/1970053597.html

I recently had the opportunity to talk to Dr. Nick Tredennick, and he shared some of the topics that he had included in his recent presentation titled The Last Convergence. His presentation defines three phases in the convergence of semiconductor-related technologies, with the first phase driven by companies like Digital that built modules from discrete components. During the second, integrated circuits began to aggregate discrete components; that expanded performance capability paved the way for minicomputers to displace mainframes. Dr. Tredennick concludes that the subsequent progress in semiconductor cost/performance characteristics brought about the high volume and broad acceptance of personal computer that even pushed minicomputers and workstations into a separate niche. He also observed that “…all of these transitions were in the second dimension; that is, planar components in planar assemblies. In addition, cost-performance drove the design of high-volume systems.”
Dr. Tredennick concludes that wafer stacking is the next convergence; this is a “…compelling change that will create seismic events throughout the semiconductor business.. He views that there are two elements contributing to this convergence. The first is that the shift of personal computers to a more mobile platform also shifted design objectives from a direct cost-performance relation toward the current emphasis on cost-performance/watt ratio. Changing to this new performance target will drive the further integration of chips into 3D devices due to the increased flexibility and functionality of 3D packages.
The second element is more revolutionary and is triggered by the anticipated transition to new light sources as the industry moves toward smaller circuit geometries.
The industry has assumed that the historic improvements in semiconductor performance would continue to follow the time-table of Moore’s Law–even though the investments necessary to achieve smaller transistors has risen exponentially for each new generation,
There is broad agreement today that the anticipated increases in performance, the increasing demand for higher wafer volume, and the expertise to continue the traditional decline in costs will all become more difficult as manufacturing processes march toward sub-20nm line widths. We may have in fact already reached the point that it will not be possible to make the next shrink in lithography on schedule due to the expenses and unresolved technical barriers ahead.
As companies continue to compete for cost/performance advantages while continuing to work on these manufacturing challenges, other alternatives to increasing performance will therefore have to be pursued. Dr. Tredennick expects that these competing OEM and semiconductor companies will likely find that wafer and die packaging techniques will yield better cost and performance results and at lower R&D costs than can be achieved by relying exclusively on the shrinking of transistor sizes.
There is no doubt that we will eventually get to smaller transistors through the use of new illumination sources and other process improvements. However, the time gap between today’s leading edge processes and the future deployment of new light sources will create the opportunity for R&D investment in other cost/performance alternatives. Furthermore by the time most manufacturers have completed that transition, the industry will have been fundamentally transformed in the interim by the convergence to these new stacked-packaging concepts.
The impact of that manufacturing scenario will challenge one of the basic assumptions upon which the semiconductor industry has relied. While value transistors once came from trailing-edge processes for which the plant, equipment, and development costs had been fully

amortized, this changes as progress slows in process lithography, and the most efficient source of the value transistors will migrate to the leading edge of fab facilities as production processes mature. As the reduction in the minimum lithography slows to less than the historic rate, the cost of wafer processing will become more influenced by the operating cost. Once the efficiencies of high volume manufacturing begin to take hold, fabs that have made this transition to the leading–edge processes will also be positioned to make value transistors.
“If the cost of silicon falls toward zero and progress in shrinking transistors slows, then where do system designers turn” for more performance and to add their own value. Dr. Tredennick concludes that the answer to this question will also be found in die and wafer stacking technologies.
The full impact of this scenario is far beyond the scope of this blog. Our worms-eye view of the universe is limited to memory technologies and we can only ask in the next blog what impact this broad trend might have to do with new memory technologies?

 

After first apologizing to Dr. Tredennick if I have somewhat mangled the points of his presentation—I completely agree with Dr. Tredennick assessment of the manufacturing challenges ahead.   
I also believe that this manufacturing issue has a double-barreled impact on the production costs of memory technologies. 
The first impact is relative to the ability to attain the smallest lithography sizes.  Some of the memory companies are already preparing for high-volume production of 25 to 30nm wafers over the next 12 to 18 months and appear to be ahead of the high-volume, production-level processes for logic products.  The memory companies will therefore likely be the first to test these limits.  Whatever additional costs these complexities contribute to the cost/performance ratio, that issue will likely apply equally to both the new memory technologies as well as to the older DRAM/NAND technologies.
However, I suspect there is a second impact to memory products that will not be borne equally by both the new and old memory technologies.  The issue relative to NAND/DRAM is that they are charge storage technologies as opposed to the data storage structures almost universally supported by the new memory technologies.  As lithography measurements below 20nm begin to significantly reduce the mass available by which stored charge technologies can maintain a consistent and predictable level of energy, both the performance and endurance of the cells changes.  This issue has not been shown to apply to the resistance and state-change memory cells.
Clever engineers have always found ways to extend the life of any technology or process, but at some point they can only do so by altering the slope in the decline of the traditional cost-per-bit or cost-per-functionality of the IC. 
I foresee the need to add more error correction or some other form of physical compensation for the existing high-volume memory technologies that will noticeably slow the decline in cost-per-bit of NAND and DRAM.  And as the result of those additional costs, the decline in the cost-per-bit of charge storage memory technologies will be on a less favorable slope than that of most of the new and emerging memory technologies.
We have already suggested one scenario by which new memory technologies can gain a foothold—we’ve presented Dr. Makimoto’s Wave as a possible harbinger of a broad shift in target applications and noted that Intel already appears to be moving in a like manner.  When you change the target application away from the monolithic desktop PC architectures, you also change the value proposition of the technologies. 
Here we have now added Dr. Tredennick’s notice of a second potentially major tremor that will likewise shake the previous foundation of traditional memory cost-per-bit expectations.

EETimes.com – Point/Counterpoint: Whats the right path for litho?

EETimes.com – Point/Counterpoint: Whats the right path for litho?.

Back in 1997, Intel led the formation of EUV LLC, a consortium that planned to commercialize extreme ultraviolet lithography by 2005. Advanced Micro Devices, IBM, Infineon and Micron were among the companies that signed on to the effort.

EUV was supposed to have replaced conventional optical lithography by now. But optical lithography is still driving the semiconductor engine, while EUV now is targeted for early production in 2012-or perhaps 2015 or 2016, depending on who’s offering the estimate. Some say it may never work.

Others are pushing for nanoimprint, maskless lithography or an emerging technology called self-assembly. And there are those who hope to extend today’s optical lithography indefinitely.

Was EUV the wrong bet for the industry? If so, what should it be working on instead? And who will benefit in the long run?

During the recent SPIE Advanced Lithography conference and other events, EE Times posed these questions to lithography experts and executives. Here are their responses.

Yan BorodovskyYan Borodovsky Intel Corp. senior fellow and director of advanced lithography at Intel’s Technology and Manufacturing Group

(Though it originally pushed for EUV, Intel is now weighing a mix-and-match lithography strategy.)

“I think complementary lithography is the right direction [for future IC designs]. . . . 193-nm lithography is the most capable and most mature technology that can meet both fidelity and cost-of-ownership requirements, but it has a weakness in terms of resolution. Complementing 193 nm with a new technology might be the best cost-of-ownership, performance and fidelity solution. The complementary technology could be either EUV or e-beam lithography.

“I think introducing EUV as a complementary technology has its challenges for high-volume manufacturing. Introducing multibeam e-beam as a complementary technology [also has its challenges].

“NAND flash makers have a much higher probability of introducing something like EUV before we do. Logic actually has more degrees of freedom in terms of layout, design rules and restrictions. So I can see why Samsung will be more aggressive to deploy EUV. They have no choice but to go to smaller wavelengths, higher NA [numerical apertures] and a K1 of 0.25.”

Dan HutchesonG. Dan Hutcheson CEO of market research firm VLSI Technology Inc.

“I think the industry is going in the right direction. It’s a lot better in this decade than in the last decade. I remember in the 1990s, when everything was on the [next-generation lithography] road map and no one would pull anything off.

“Meanwhile, we have an ongoing business that allocates so many dollars for R&D every year. And if you look out there for future nodes, you need to have two to three alternatives over your existing technology to make sure you can go down Moore’s Law.

“As a last resort, e-beam will always write fine geometries. The downside is that it violates Moore’s Law. Imprint is a very interesting technology; the technology needs to be developed. EUV, too.

“Then we have the existing technology, which is double patterning. But [if I’m a chip maker] I am going to spend a lot of money on [double patterning], because now my litho tool productivity is basically cut in half. So my cost per wafer doubles. And I am going to need twice as many tools, which is great for the equipment industry.”

Burn LinBurn Lin Senior director of the micropatterning division at Taiwan Semiconductor Manufacturing Co. Ltd.

“The industry is betting too much on one horse. I think it’s dangerous to bet on one horse. A lot of people know that.”

Chris MackChris Mack Consultant and “gentleman scientist”

“It’s always risky to bet on one technology that is high risk and not pursue others simultaneously. And I think it’s been a little bit out of whack that we’ve invested too much in trying to make EUV successful and getting too emotionally attached when you say, ‘We’ve got to make sure we’re not distracted by these other technologies, so we’re going to make sure that only EUV is the one we focus on.’ I don’t have a lot of complaints that EUV got a lot of funding. What I’ve got a complaint about is when people try to limit the other options that are the competitors.

“I am an ‘optical forever’ guy. I am a big proponent of doing more [research] on line-edge roughness. I think longer-term research on subassembly is something we should be doing. It was very premature to give up on some of the high-index materials development. If we have stayed the course, I think those high-index materials would have been there to extend double patterning another generation.”

Hans PfeifferHans Pfeiffer Proprietor of HCP Consulting Services

“If you remember, there have been quite a number of alternatives in lithography. One of them was X-ray, a large program that was supposed to extend lithographic capability beyond optical lithography. But optical lithography never fell off the cliff. And that’s the case today. However, I think we’re seeing the cliff a little bit closer now, and that’s what mobilizes all of these additional resources to finally come up with a practical alternative or solution.

“There are sure no winners right now. That’s the reason why many different technologies are being pursued. The top priority is still to further work on 193 nm and extend that to the absolute. This provides some time for EUV, which is the next major contender.

“But are we headed in the wrong direction? There are many different directions being pursued, but none has really so far exceeded EUV. Most large semiconductor companies are pretty much counting on EUV to be there.

“EUV always looked like the impossible dream. But there are tremendous resources behind it. Is EUV late? Yes. Everyone understands that lateness is not only inconvenient, but it’s also expensive.

“Maskless lithography is struggling to regain a certain level of interest in the industry. E-beam had a very successful period and then basically went under. It did not keep up with Moore’s Law.”

Kurt RonseKurt Ronse Director of the lithography department at IMEC

“I think we’re going in the right direction because there are not many alternatives at this moment; [we] either stop scaling or continue to push EUV.

“A lot of progress has been made on EUV. It’s not a done deal; there is a lot of work to be done. [But] in my opinion, the gap between EUV and the alternatives has increased during the last year. All of the other alternatives did not make much progress. They also had difficulties in getting funds. For the alternatives, it will be very challenging to hit their targets. The alternatives have to focus on 16 or 11 nm, because they have some ways to go. If they keep focusing on 32 nm or maybe 22 nm, they will miss their targets.”

Wally RhinesWalden Rhines Chairman and chief executive of Mentor Graphics

“Computational lithography [including OPC and other resolution enhancement techniques] is what will save us from the [soaring costs] of steppers. Computational lithography represents the biggest TAM [total available market] for EDA in the last decade.”

Dan RubinDan Rubin Venture capitalist with Alloy Ventures

“It is increasingly apparent that EUV is not able to leverage the conventional optical lithography infrastructure. The novel innovation required across an unestablished supply chain for EUV sources and reflective masks, and defect inspection continues to require herculean efforts, significant funding and schedule adjustments. If a complete technical solution is assembled in time, the suggested costs will make EUV unaffordable for advanced memory device adoption.

“I [am] a believer in imprint lithography for the memory market. The progress Molecular Imprints has made on less than a $100 million total investment is incredible, and the pace of performance improvements continues unabated. The usability of their CMOS tools and the throughput of their hard drive tools are technically impressive. If they had received a fraction of the dollars and industry attention that have been spent on EUV, they would have sub-32-nm CMOS production tools today.”

Mark Mmelliar-SmithMark Melliar-Smith CEO of nanoimprint lithography vendor Molecular Imprints Inc.

“The industry [has] restricted its vision. It is focusing much, much more on a single solution. I think that’s bad. “If MII had a month’s worth of EUV funding in the past year, we could have moved a long way to solving our remaining issues in the semiconductor market and been ready for production in 12 to 18 months.”

Kazuo UshidaKazuo Ushida President of the Precision Equipment Co. at Nikon Corp.

“For small-volume production, EUV looks very promising. But . . . EUV will be late for the 22-nm half-pitch road map. EUV will appear later, maybe by 16 nm. We have no metrology tools. It will take two years to develop the mask tools.”

EETimes.com – SPIE: TSMC jumps on EUV bandwagon

EETimes.com – SPIE: TSMC jumps on EUV bandwagon.

SAN JOSE, Calif. — In a major development, ASML Holding NV said that Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) will take delivery of ASML’s extreme ultraviolet (EUV) lithography system.At some point, possibly next year or sooner, TSMC will take delivery of a TwinScan NXE:3100 tool from ASML. The NXE:3100 is a ”pre-production” EUV tool, said to have an NA of 0.25.

This represents a change in direction for silicon foundry giant TSMC. TSMC has dismissed EUV–at least in the past. For next-generation lithography, the company has been backing maskless lithography. It will continue to do so.

After months of collaboration, foundry chip supplier TSMC and Mapper Lithography BV recently claimed that Mapper’s tool located on TSMC’s Fab 12 GigaFab is printing features so far unachievable with current immersion lithography technology. In 2008, TSMC and Mapper concluded an agreement according to which Mapper would ship its first 300 mm multiple-electron-beam maskless lithography platform for process development and device prototyping to TSMC.

TSMC is also expected to be one the first dedicated foundries conducting on-site EUV development. It will install the new system on its Fab 12 GigaFab for development of future technology nodes.

TSMC is evaluating EUV and other lithography technologies for their potential to optimize cost-effective manufacturing at future technology nodes. EUV technology employs a much shorter wavelength and has the potential to reduce costs associated with current techniques used to stretch 193-nm immersion lithography, making it a promising lithography technology for manufacturing IC’s for future advanced technology nodes.

“TSMC will use a TwinScan NXE:3100 for research and development of future advanced technology nodes,” said Shang-yi Chiang, TSMC’s senior vice president of research and development, in a statement. “EUV is one of next-generation lithography technologies we are investigating.”

Others have also jumped on the EUV bandwagon, including Hynix, Intel, Samsung, Toshiba, among others.

Nano-injection; NGL to make 0.039um2 bitcell for 16nm

  • 나노 인젝션(NanoInjection)이라는 새로운 리소그래피 기술을 이용한다. 이는 가스를 불어 넣는 지점에 전자 빔을 대서 패턴을 그리는방법이다(그림6(b)).
  • 나노 인젝션의 이점은 기존의 전자 빔 리소그래피 기술과는 달리 포토 레지스트가 필요 없다는 점이다. 포토 레지스트를 쓰지 않아도 되기 때문에 리소그래피의 해상도를 높이기 쉽고, 결과적으로 미세한 패턴을 형성할 수 있게 되는 것이다.
  • 하지만 단점도 있다. 기존의 전자 빔 기술 등과 마찬가지로 생산성이 낮다는 것이다. 앞으로 생산성 향상을 위한 연구개발이 진행될 것으로 보인다.
  • Nano injection lithography eliminates the masks of other lithography techniques. Eliminating the masks and the photoresist cuts the patterning process from five steps to one, greatly simplifying production.
  • A new type of lithography, which uses an electron beam to spark a chemical reaction, could provide a cheaper way to build the incredibly tiny transistors that the chipmaking industry will require in a few years.
  • Researchers from Taiwan and the University of California, Berkeley, say they’ve made static random access memory (SRAM) that anticipates 16-nanometer chip features with a new process called nano injection lithography.
  • They say their technique may provide an alternative to lithography that relies on extreme ultraviolet light (EUV), which still is beset by problems and could be extremely expensive.
  • a metallorganic gas, an organic molecule studded with atoms of platinum.
  • An electron beam with a diameter of 4.6 nm is fired at the gas, causing a chemical reaction that deposits the platinum on the silicon chip in the desired pattern, while the rest of the gas flows away.
  • With this hard mask deposited on the silicon, the researchers then use chemicals to etch away exposed silicon and thereby create the desired circuits. The platinum mask is then chemically removed.

EETimes.com – ST joins CEA-Leti e-beam lithography program

EETimes.com – ST joins CEA-Leti e-beam lithography program.

PARIS — STMicroelectronics NV announced it has joined Imagine, a CEA-Leti program focused on electron-beam direct write lithography for IC manufacturing for 22-nm and beyond.Intended to operate for three years, this program allows companies to assess a maskless lithography infrastructure for IC manufacturing and use Mapper’s technology as a solution towards high throughput. It covers a global approach, including tool assessment, patterning and process integration, data handling, prototyping and cost analysis.

The purpose of the Imagine industrial program is to reach throughput of 10 wafers per hour per exposure module. As is, this rate would compete with other technologies on a wafers-per-square-meter basis and will offer a better solution in terms of modularity and power consumption, Leti indicated.

According to Joel Hartmann, Silicon-Technology development director for ST, at Crolles, France, CEA is leading the multi-partner program Imagine, and in December 2009, ST and CEA-Leti signed an agreement under which ST would join the Imagine Program.

He told EE Times: “Practically, the Mapper equipment is installed in CEA-Leti premises and thanks to advanced R&D wafers batch processing and ST R&D expertise, we will contribute to assess process/equipment capability in terms of lithography and throughput performances.”

In July 2009, CEA-Leti announced that Mapper Lithography NV had shipped one of its 300-mm electron-beam lithography platforms to CEA-Leti in Grenoble, France, to be used as part of the Imagine program.

ST said it has been working for more than a decade with CEA-Leti on maskless lithography.

“Together, ST and CEA-Leti have established a full shaped-beam capability on ST’s Crolles pilot line and demonstrated the insertion of e-beam technology in a standard CMOS process flow,” stated Hartmann. “Joining the Imagine program is a logical step for ST to get access to a mask-less lithography possible solution for future technology nodes.”

Also in July, TSMC joined the Imagine Program in order to federate the semiconductor industry around this technology and accelerate its development and introduction for IC manufacturing.

“ST and TSMC are members of Imagine initiative. There is an interest for big players on semiconductor market to evaluate and assess potential capability of mask-less multi-beam technology for future technology nodes,” commented Hartmann to EE Times.